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High Power DFB Laser Diode Chip
  • High Power DFB Laser Diode Chip

High Power DFB Laser Diode Chip

Center Wavelength:1310nm

Operating Temperature:-5~75℃

Storage Temperature:-40~95℃

Product Details

Description

The GL-H-310-B-070-B0-X-200-T is a 1310nm edge-emitting DFB laser diode with a BH structure. This chip incorporates  multi-quantum wells (MQWs) active  layers and a  built-in distributed feedback  (DFB) grating, ensuring stable, high-performance operation.

 

Key Features
• High Power
• Multi-Quantum Wells Distributed Feedback (DFB) Laser 
• Engineered to meet Telcordia GR-468 standards
• ROHS Compliant

 

Applications
• SiPh 
• Optical Test Instrument
• Compliant Fiber Optic Communications

 

 

Questions & Comments

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